Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes

• DOI: 10.1142/s179329201650082x
• Publication Date: 2016-03-30T03:23:40Z
• Authors: Yang Hang; Qi Li; Wei Luo; Yanlan He; Xueao Zhang; Gang Peng
• Keywords: Exfoliation joint; Quantum Efficiency

The photo-electrical properties of trilayer MoSe 2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] relatively carrier mobility (1.79[Formula: text]cm[Formula: text]. field effect transistor (FET) device shows sensitive photo response, photoresponsivity ([Formula: text][Formula: text]mA/W), quick response time text]ms), external quantum efficiency detection rate for red near-infrared wavelength. These results showed that the based on few-layer exhibited good properties, which might open new way to develop -based material application FETs optoelectronics.