VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

• DOI: 10.1142/s2010324712400024
• Publication Date: 2012-09-10T02:00:26Z
• Authors: PEDRAM KHALILI AMIRI; KANG L. WANG
• Keywords: Tunnel magnetoresistance; Magnetism; Magnetoresistive random-access memory

Electric-field-control of magnetism can dramatically improve the energy efficiency spintronic devices and enhance performance magnetic memories. More generally, it expands range applications nonvolatile devices, by making them energetically competitive compared to conventional semiconductor solutions for logic computation, thereby potentially enabling a new generation ultralow-power systems. This paper reviews recent experiments on voltage-controlled anisotropy (VCMA) effect in thin films, their device implications. The interfacial perpendicular layered material stacks, as well its modulation voltage, are discussed. Ferromagnetic resonance VCMA-induced high-frequency magnetization dynamics reviewed. Finally, we discuss progress voltage-induced switching tunnel junction potential random access memory (MRAM).