Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

• DOI: 10.1143/apex.2.035004
• Publication Date: 2009-02-27T03:23:03Z
• Authors: Hajime Goto; Katsutoshi Nosaki; Katsuhiro Tomioka; Shinjiro Hara; Kenji Hiruma; Junichi Motohisa; Takashi Fukui
• Keywords: Open-circuit voltage

We report on the formation of core–shell pn junction InP nanowires using a catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) method. A periodically aligned dense nanowire array was fabricated and used in photovoltaic device applications. The exhibited open-circuit voltage (VOC), short-circuit current (ISC) fill factor (FF) levels 0.43 V, 13.72 mA/cm2 0.57, respectively, which indicated solar power conversion efficiency 3.37% under AM1.5G illumination. This study demonstrates that high quality structure fabrication is possible by SA-MOVPE arrays can be integrated devices.