High Mobility Exceeding 80 cm2V-1s-1in Polycrystalline Ta-Doped SnO2Thin Films on Glass Using Anatase TiO2Seed Layers

• DOI: 10.1143/apex.3.031102
• Publication Date: 2010-02-26T02:34:55Z
• Authors: Shoichiro Nakao; Naoomi Yamada; Taro Hitosugi; Yasushi Hirose; Toshihiro Shimada; Tetsuya Hasegawa
• Keywords: Electron Mobility

High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead the preferred growth (200)-oriented TTO films, resulting in 30% increase carrier density and more than two times mobility, compared directly substrates. highest mobility obtained 83 cm2 V-1 s-1 with resistivity 2.8×10-4 Ω cm, whereas film lowest 1.8×10-4 cm had 60 s-1.