High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

• DOI: 10.1143/apex.4.082104
• Publication Date: 2011-07-20T02:02:36Z
• Authors: Yuji Zhao; Shinichi Tanaka; Chih-Chien Pan; Kenji Fujito; Daniel Feezell; James S. Speck; Steven P. DenBaars; Shuji Nakamura
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (2021) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6 mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5 mW and 45.3%, respectively.