Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing*1

• DOI: 10.1143/jjap.35.221
• Publication Date: 2002-10-01T22:45:10Z
• Authors: Kyung-youl Min; Yosuke Suzuki; Riichirou Mitsuhashi; Masahiko Inoue; Ryuichi Shimizu R...; Siegfried Hohmann...
• Keywords: 01 natural sciences; 0104 chemical sciences

We have developed an ultrahigh-vacuum (UHV) apparatus which enables reflection high-energy electron diffraction (RHEED), sputtering yield measurement and ion scattering spectroscopy (ISS) to be performed simultaneously, leading a more comprehensive understanding of the growth mechanism titanium nitride (TiN) film by post-irradiation processing. The revealed anomalous phenomenon in initial stage processing, i.e., hardly took place on under 3 keV N 2 + irradiation for doses below ∼5×10 15 ions/cm . Further led low between ∼3×10 16 , finally approached steady-state above Monitoring surface composition was also ISS examine whether follows change behavior or not.