Magnetic and Electrical Properties in CePtSi3without Inversion Symmetry in the Crystal Structure

• DOI: 10.1143/jpsj.76.014710
• Publication Date: 2007-01-10T06:28:58Z
• Authors: Tomoya Kawai; Yusuke Okuda; Hiroaki Shishido; Arumugam Thamizhavel; Tatsuma D. Matsuda; Yoshinori Haga; Miho Nakashima; Tetsuya Takeuchi; Masato Hedo; Yoshiya Uwatoko; Rikio Settai; Yoshichika Ōnuki
• Keywords: Tetragonal crystal system; Crystal (programming language)

We succeeded in growing a single crystal of CePtSi 3 with the tetragonal BaNiSn -type structure by Sn-flux method. is found to be an antiferromagnet successive two transitions at T N1 = 4.8 K and N2 2.4 K. The magnetization for H ∥[100] indicates metamagnetic c1 1.8 kOe c2 15 saturates above s 45 kOe, ordered moment 1.15 µ B /Ce. [100] direction easy-axis magnetization, while [001] corresponds hard-axis. anisotropy magnetic susceptibility very similar that pressure-induced superconductors CeRhSi CeIrSi , which commonly ascribed crystalline electric field effect.