(Invited) High-Performance Field-Effect-Transistors on Monolayer-WSe2

• DOI: 10.1149/05807.0281ecst
• Publication Date: 2013-10-18T19:40:55Z
• Authors: Wei Liu; W. Cao; Jiahao Kang; Kaustav Banerjee
• Keywords: Tungsten diselenide; Diselenide

Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effect-transistors (FETs). This paper reviews the relevant physics and properties of WSe2 highlights excellent scalability monolayer ultra-short (sub-5 nm) FETs. The crucial role metal-WSe2 contacts in determining performance FETs is also emphasized using experiments guided by ab-initio density functional theory (DFT). With suitably chosen contact, back-gated FET on Al2O3 substrate shown to exhibit both high mobility ON-current.