Effect of Postdeposition Annealing on the Structural and Sensing Characteristics of Tb2O3and Tb2Ti2O7Sensing Films for Electrolyte-Insulator-Semiconductor pH Sensors

• DOI: 10.1149/2.0641504jes
• Publication Date: 2015-02-04T04:33:36Z
• Authors: Tung-Ming Pan; Chih-Wei Wang; Yu-Shu Huang; Wen-Hui Weng; See-Tong Pang
• Keywords: 02 engineering and technology; 0210 nano-technology

In this study, we proposed an electrolyte–insulator–semiconductor (EIS) device fabricating from Tb2O3 and Tb2Ti2O7 sensing films deposited on Si substrates through reactive sputtering. The effect of different annealing temperatures (600, 700, 800, 900°C) the structural surface properties was investigated. performance as pH sensors evaluated correlated with observed material properties. Compared film, EIS sensor using film that had been annealed at 900°C exhibited better performances, including a higher sensitivity (69.21 mV/pH), smaller hysteresis voltage (4 mV), lower drift rate (0.113 mV/h), presumably incorporation Ti into to form well-crystallized structure.