Growth of High Frequency SiGe Heterojunction Bipolar Transistors Structures

• DOI: 10.1238/physica.topical.101a00045
• Publication Date: 2003-07-31T10:28:02Z
• Authors: H. H. Radamson; B. Mohadjeri; C. Menon; A. Bentzen; J. Grahn; G. Landgren
• Keywords: Heterojunction bipolar transistor

The growth of heterojuntion bipolar transistor structures using chemical vapor deposition has been investigated. Generation defects in selectively or nonselectively grown collector layers arsenic as the dopant studied. Minimizing defect density SiGe base by optimizing rate also investigated detail. High resolution reciprocal lattice mapping, atomic force microscopy and secondary ion mass spectrometry have used main characterization tools.