Using laser sputtering to obtain semiconductor nanoheterostructures

• DOI: 10.1364/jot.75.000389
• Publication Date: 2010-12-16T16:16:51Z
• Authors: B. N. Zvonkov; O. V. Vikhrova; Yu. A. Danilov; P. B. Demina; M. V. Dorokhin; V. V. Podol'skiĭ; E. S. Demidov; Yu. N. Drozdov; M. V. Sapozhnikov
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) the delta-doped layers obtained by laser corresponding process vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on InGaAs∕GaAs system make it possible control spectrum and electroluminescence intensity. Reducing pressure reactor 25–50Torr allows deposition carried out at reduced temperatures epitaxial base material makes obtain GaAs InAs semiconductors with high manganese-doping level that demonstrate ferromagnetic properties room temperature.