Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform

• DOI: 10.1364/oe.15.000623
• Publication Date: 2009-11-17T15:39:35Z
• Authors: Jifeng Liu; Dong Pan; Samerkhae Jongtha...; Kazumi Wada; Lionel C. Kimerling; Jurgen Michel
• Keywords: Extinction ratio; Cladding (metalworking); Waveguide

We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic circuits on silicon-on-insulator (SOI) platform. The modulator is based the Franz-Keldysh effect, composition chosen optimal performance around 1550 nm. designed device butt-coupled to Si(core)/SiO(2)(cladding) high index contrast waveguides, has predicted 3 dB bandwidth >50 GHz an extinction ratio 10 dB. same structure can also be used waveguide-coupled photodetector with responsivity > 1 A/W 35 GHz. Use allows efficient monolithic process integration SOI