Design of High Efficiency Multi-GHz SiGe HBT Electro-Optic Modulator

• DOI: 10.1364/oe.17.013425
• Publication Date: 2009-07-21T14:52:35Z
• Authors: Shengling Deng; Z. Rena Huang; J. F. McDonald
• Keywords: Heterojunction bipolar transistor

We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with composition graded SiGe base. The waveguide has large cross-section of 1 microm for ease fiber alignment. At base-emitter bias V BE = 2.5 V, pi-phase shift requires 74.5 interaction length TM polarization at lambda 1.55 microm. total optical attenuation is 3.9 dB to achieve in this condition. This device expected operate switching speed 2.4 GHz.