Comparison of emission characteristics between the CdZnO/ZnO quantum wells on ZnO and GaN templates

• DOI: 10.1364/oe.20.021860
• Publication Date: 2012-09-10T18:59:47Z
• Authors: Shao-Ying Ting; Yu-Feng Yao; Wei-Lun Chung; Wen-Ming Chang; Chih-Yen Chen; Hao-Tsung Chen; Che-Hao Liao; Horng-Shyang Chen; Chieh Hsieh; C. C. Yang
• Keywords: Wurtzite crystal structure; Template; Emission intensity

CdZnO/ZnO quantum well (QW) samples are grown on GaN and ZnO templates with plasma-assisted molecular beam epitaxy under different conditions of substrate temperature, Cd effusion cell O(2) flow rate for emission characteristics comparison. It is found that the incorporation template generally lower, when compared template, such needs to be reduced stoichiometric QW growth template. Besides wurtzite (wt) CdZnO structure, rock-salt (rs) structure exists in layers total content high. The rs may dominate over wt photoluminescence intensity In either group templates, efficiency first increases then decreases increasing content. low at (high) attributed weaker confinement (the poorer crystal quality) QWs. efficiencies higher than those carrier localization behavior a QW, or significantly an InGaN/GaN QW. strength quantum-confined Stark effect templates.