Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm

• DOI: 10.1364/oe.23.019947
• Publication Date: 2015-07-23T19:47:24Z
• Authors: Roman Bek; Stefan Baumgärtner; Fabian Sauter; Hermann Kahle; Thomas Schwarzbäck; Michael Jetter; Peter Michler
• Keywords: Disk laser; Mode-Locking

We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both gain and absorber structure contain InP quantum dots (QDs) as active material. In v-shaped cavity using samples end mirrors, beta barium borate (BBO) crystal is placed in front of saturable mirror (SESAM) for pulsed UV emission one two outcoupled beams. Autocorrelation (AC) measurements fundamental wavelength reveal FWHM pulse duration 1.22ps. With repetition frequency 836MHz, average output power 10mW per beam red 0.5mW 325nm.