On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities

• DOI: 10.1364/oe.24.006004
• Publication Date: 2016-03-09T21:52:47Z
• Authors: Wei Cai; Yongchao Yang; Xumin Gao; Jialei Yuan; Wei Yuan; Hongbo Zhu; Yongjin Wang
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.