Ultrafast transient absorption measurements of photocarrier dynamics in monolayer and bulk ReSe2

• DOI: 10.1364/oe.26.021501
• Publication Date: 2018-08-06T18:54:29Z
• Authors: Jiaqi He; Lu Zhang; Dawei He; Yongsheng Wang; Zhiyi He; Hui Zhao
• Keywords: Photoconductivity

Recently, transition metal dichalcogenides have been extensively studied as new functional materials for electronic and optoelectronic applications. Most initial efforts focused on several members of this material family with 2H lattice structure. ReSe2 a less-study dichalcogenide has gained significant momentum due to its 1T structure in-plane anisotropic optical properties. Extensive shown promising future novel optoelectronics. However, little was known about the photocarrier dynamics in material. Here we report first transient absorption measurement bulk monolayer sample reflection geometry. We observed ultrafast thermalization relaxation hot carriers ReSe2, obtained lifetime order 80 ps decreases slightly increasing carrier density. Pronounced response differential observed. also samples by chemical vapor deposition deduced 10 ps. These results provide fundamental information using various devices.