Ellipsometric characterization of doped Ge_095Sn_005 films in the infrared range for plasmonic applications

• DOI: 10.1364/ol.41.004398
• Publication Date: 2016-09-14T13:54:05Z
• Authors: L. Augel; I. A. Fischer; F. Hornung; M. Dressel; A. Berrier; M. Oehme; J. Schulze
• Keywords: Characterization; Ellipsometry

GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated wavelength range from 1 to 16 μm. We discuss suitability these films integrated plasmonic applications infrared region.