Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

• DOI: 10.1364/ol.519723
• Publication Date: 2024-02-20T14:00:16Z
• Authors: Siyuan Cui; Lang Shi; Leonard Jin; Qianxi Zhou; Yuechang Sun; Conglong Jin; Jiahui Hu; Kuosheng Wen; Zhou Xu; Shengjun Zhou
• Keywords: Quantum Efficiency

AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor light extraction efficiency. Here, we demonstrate vertical miniaturized-LEDs (mini-LEDs) with porous n-AlGaInP surface using wet etching process to boost extraction. We investigated effects of time on morphology surface. found that as prolonged, density pores increases initially and decreases subsequently. In comparison mini-LED smooth surface, mini-LEDs reveal improvement in output power EQE, meanwhile, without deterioration electrical performance. The highest 38.9% EQE measured at 20 mA observed maximum pores. Utilizing three-dimensional finite-difference time-domain method, underlying mechanisms improved performance, are associated suppressed total internal reflection efficient scattering effect