Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO2 ALD passivation

• DOI: 10.1364/ol.543122
• Publication Date: 2024-11-26T13:00:10Z
• Authors: Natchanon Prechat...; Ming-June Wu; Chee-Keong Yee; Theeradech Suthee...; Yi-Tzu Tseng; Yun-Cheng Yang; Chia-An Lee; Kuan-Heng Lin; Chao-Hsin Wu
• Keywords: Passivation

Micro light-emitting diodes (µLEDs), crucial for advanced displays and communication systems, face efficiency challenges due to sidewall defects. This study investigates the impact of various passivation layers, including SiO 2 , Al O 3 HfO on AlGaInP-based 620 nm red µLEDs. We fabricated devices with two mesa sizes demonstrated that atomic layer deposition (ALD) passivation, especially significantly enhances performance. shows improvement in external quantum (EQE) by up 57.9% a 13 × 20 µm device size 43.9% 26 40 size, compared µLEDs . Furthermore, it reduces surface recombination velocity (SRV) 19.7% These findings highlight potential via ALD, advancing µLED technology improving performance through effective defect mitigation.