High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators

• DOI: 10.1364/ome.494148
• Publication Date: 2023-06-20T13:00:12Z
• Authors: Gilles F. Feutmba; Leandro da Silva; Nishant Singh; Laurens Breyne; Kobe De Geest; John Puthenparamp...; Johan Bauwelinck; Dries Van Thourhout; Xin Yin; Jeroen Beeckman
• Keywords: Pockels effect; Lead zirconate titanate

The increasing demand for high data rates and low power consumption puts silicon photonics at the edge of its capabilities. heterogeneous integration optical ferro-electric materials on enhances functionality insulator (SOI) platform to meet these demands. Lead zirconate titanate (PZT) thin films with a large Pockels coefficient good quality can be directly integrated SOI waveguides fast electro-optic modulators. In this work, relative permittivity dielectric loss PZT deposited by chemical solution deposition substrates are analyzed frequencies. We extract ε r =1650−2129 tan ( δ ) = 0.170 − 0.209 in frequency range 1-67GHz. show possibility achieving bandwidths beyond 60GHz via Mach-Zehnder modulator V π 7V, suitable next generation communication systems.