Crystalline GeSn growth by plasma enhanced chemical vapor deposition

• DOI: 10.1364/ome.8.003220
• Publication Date: 2018-09-26T19:55:25Z
• Authors: Wei Dou; Bader Alharthi; Perry C. Grant; Joshua M. Grant; Aboozar Mosleh; Huong Tran; Wei Du; Mansour Mortazavi; Baohua Li; Hameed Naseem; Shui-Qing Yu
• Keywords: 0103 physical sciences; 01 natural sciences

Single crystalline GeSn growth on Si substrate was successfully demonstrated by using plasma enhanced chemical vapor deposition (PE-CVD) with commercially available GeH4 and SnCl4 precursors. Using the enhancement technique, low temperature at 350°C for epitaxy achieved rate of 51.4 nm/min Sn content up to 6%. The relaxed films 1 µm thickness were able be grown despite huge lattice mismatch between Si. Structural optical characterizations conducted study film properties. showed its effectiveness enhance incorporation maintain high rate.