Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes

• DOI: 10.1364/ome.9.000203
• Publication Date: 2018-12-18T21:28:17Z
• Authors: Davide Priante; Malleswararao Tangi; Jung-Wook Min; Nasir Alfaraj; Jian Wei Liang; Haiding Sun; Hala H. Alhashim; Xiaohang Li; Abdulrahman M. Al...; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi
• Keywords: 02 engineering and technology; 0210 nano-technology

Self-assembled nanowires are posed to be viable alternatives conventional planar structures, including the nitride epitaxy for optoelectronic, electronic and nano-energy applications.In many cases, current injection extraction at nanoscopic scale essential marked improvement macroscopic scale.In this investigation, we study mechanism of nanoscale origin flow charged carriers group-III semiconductor surface metal-semiconductor interfaces.Conductive atomic force microscopy (c-AFM) Kelvin probe (KPFM) enable a rapid analysis electrical morphological properties single ensemble nanostructures.The potential AlGaN nanowirebased LEDs spatially mapped before after treatment with KOH solution.Treated-nanowires showed an improved spreading increased by nearly 10×, reduced sub-turn-on voltage (as low as 5 V), smaller series resistance.The contact confirms lower semiconductor/metal barrier, thus enabling larger flow, correlates 15% increase in efficiency LEDs.The leads normalization conducting UV AlGaN-based nanowire-LEDs lays foundation realization practical nanowire-based device applications.