Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer

• DOI: 10.1364/optica.4.001468
• Publication Date: 2017-11-27T21:41:50Z
• Authors: Yuting Shi; Zhechao Wang; Joris Van Campenhout; Marianna Pantouvaki; Weiming Guo; Bernardette Kunert; Dries Van Thourhout
• Keywords: Wafer Bonding

Fully exploiting the potential of silicon photonics requires high-performance active devices such as lasers, which can be monolithically integrated in a scalable way.However, direct bandgap III-V semiconductors exhibit large lattice mismatch and/or strongly differing thermal expansion coefficient with silicon.This makes monolithic integration on without introducing excessive defects material extremely difficult.The majority methods proposed thus far either are not compatible further low-cost or rely special substrate.Here we demonstrate InGaAs/GaAs single-mode nano-ridge lasers directly grown standard (001) 300-mm Si wafer.Exploiting aspect ratio defect trapping technique, unwanted confined to narrow trench defined substrate.The structures subsequently out these trenches high crystalline quality shown by high-resolution transmission electron microscopy analysis and strong photoluminescence response.They controlled shape optimizing growth conditions, allows us minimize substrate leakage maximize confinement InGaAs quantum wells providing optical gain.Distributed feedback were fabricated defining first-order grating nano-ridge.Under pulsed pumping, singlemode lasing side mode suppression over 28 dB was shown, precise control emission wavelength 60 nm achieved.This demonstration proves provides credible road towards CMOS-compatible platform for high-volume manufacturing photonic circuits, including laser amplifier devices.