Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging

Photoconductivity Photocurrent Photodetection
DOI: 10.1364/prj.524978 Publication Date: 2024-06-19T01:00:09Z
ABSTRACT
Two-dimensional (2D) graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional (3D) AlGaN, in which design a 2D graphene/3D AlGaN junction becomes crucial. This study investigates response mechanisms two distinct graphene/AlGaN (Gr-AlGaN) lateral and vertical configurations. For Gr-AlGaN photodetector, photogenerated electrons drifting into p-type channel induce negative photoconductivity persistent photoconductive effect, resulting high responsivity 1.27×10 4 A/W detectivity 3.88×10 12 Jones. Although capability device is inferior to one, it shows significantly reduced dark current self-powered detection. The electron-hole pair can be spontaneously separated by electric field generate photocurrent at zero bias. Hence, photodetector array satisfied passive driving imaging like deep space Conversely, exceptional emphasizes its prospects steady object recognition with low-light emission. Moreover, improved sharpness light illumination duration makes suitable biomimetic visual learning, follows memory process. elucidates efficient approach diverse photodetection applications through configuration junctions.
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