Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications

topological insulator Mining engineering. Metallurgy thermoelectric materials TN1-997 02 engineering and technology 7. Clean energy antimony telluride PVD magnetron sputtering thin films TA401-492 0210 nano-technology Materials of engineering and construction. Mechanics of materials
DOI: 10.1515/amm-2017-0155 Publication Date: 2017-06-01
ABSTRACT
AbstractAntimony telluride (Sb2Te3) is an intermetallic compound crystallizing in a hexagonal lattice withR-3mspace group. It creates a c lose packed structure of anABCABCtype. As intrinsic semiconductor characterized by excellent electrical properties, Sb2Te3is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2Te3in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3. Applications of Sb2Te3in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2Te3were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2Te3thin films for optical uses have been also made.
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