Variation of the metal-insulator phase transition temperature in VO2: An overview of some possible implementation methods

• DOI: 10.15407/spqeo27.02.136
• Publication Date: 2024-07-01T09:24:24Z
• Authors: M.Ya. Valakh; ; V.O. Yukhymchuk; V.M. Dzhagan; O.F. Isaieva; V.S. Yefanov; B.M. Romanyuk
• Keywords: Variation (astronomy); Metal–insulator transition

The great interest in VO2, which has stimulated a large number of studies and publications recent decades, is caused by the reversible metal-insulator phase transition (MIT) that occurs at T = 68 °C accompanied transformation low-temperature dielectric (semiconductor) monoclinic into high-temperature metallic with rutile structure. Despite ongoing discussion about physical mechanism this transition, concomitant rapid change electrical optical characteristics material several orders magnitude already finds numerous applications optics, optoelectronics sensors. At same time, it became obvious both performance VO2 would greatly increase, if were possible to decrease temperature without deterioration other properties. This issue become subject studies. Mechanical stress oxygen vacancies lattice, concentration free charge carriers, tuned impurity doping or implantation, have been investigated discussed as main factors affecting temperature. In review, we intend summarize analyze literature data on these ways, primarily those are most efficient influencing while maintaining significant modulation characteristics.