Properties of RF Sputtered ZnTe:N films for Back Contact to CdS/CdTe Solar Cells

• DOI: 10.1557/proc-668-h5.9
• Publication Date: 2011-04-06T03:31:26Z
• Authors: Jennifer Drayton; A. Gupta; K. Makhratchev; K. J. Price; R. G. Bohn; A.D. Compaan
• Keywords: Cadmium telluride photovoltaics

ABSTRACTMost of the low resistance back contacts formed on high efficiency CdS/CdTe solar cells involve copper either in elemental form (such as Cu/Au back contacts) or as dopant in other material (such as Cu-doped ZnTe). But copper is also suspected to be a cause of degradation of devices in long-term stability tests due to its high diffusion coefficient in polycrystalline CdTe. In this paper, we present results on the development of nitrogen-doped ZnTe back contacts for CdS/CdTe solar cells. Reproducible N-doped p-ZnTe films were prepared using reactive RF magnetron sputtering with Ar/N2gas mixtures. The conductivity of the doped ZnTe films was more than five orders of magnitude higher than that of intrinsic films. We find that annealing in air can further increase the conductivity. Efficiencies near 10% have been achieved with a ZnTe:N/Ni back contact.