Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

• DOI: 10.1587/elex.14.20170411
• Publication Date: 2017-05-16T22:08:21Z
• Authors: Minru Hao; Huiyong Hu; Chenguang Liao; Haiyan Kang; Han Su; Qian Zhang; Yingbo Zhao
• Keywords: Nanometre

The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. variation oxide-trapped charge (Not) and interface-trap (Nit) with the total dose also investigated. A two-dimensional analytical model threshold voltage (Vth) developed degradation due to irradiation taken into consideration. Based on this model, numerical simulation carried out by Matlab, influence dose, geometry physics parameters were simulated. In addition, evaluate validity results compared experimental data, good agreements confirmed. Thus, proposed provides reference for research reliability application integrated circuit nanometer transistor.