A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process

• DOI: 10.1587/elex.19.20220425
• Publication Date: 2022-11-10T22:09:56Z
• Authors: Yihui Fan; Jing Wan; Zhe Yang; Gong Gao; Wenxiang Zhen; Yuepeng Yan; Xiaoxin Liang
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology

This work presents a transformer matching X band MMIC power amplifier (PA) on gallium nitride (GaN) process. A port impedance modeling-based design method is proposed and analyzed. The simplifies the network process, improves accuracy, relieves designer's burden. novel compact temperature compensation (TC) circuit also used in this design. PA 0.25µm GaN technology occupies 1.594mm2 area. At 28V supply, gain output of reaches 15dB 29dBm respectively. Additionally, designed TC stabilizes current consumption from variation. From -55 to 85°C, stability by more than 60% using bias circuit.