Сравнительное исследование латерального фотовольтаического эффекта в структурах Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/n-Si и Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/p-Si

• DOI: 10.21883/ftt.2018.07.46114.037
• Publication Date: 2018-06-20T01:25:05Z
• Authors: T.A. Писаренко; В.В. Балашев; В.A. Викулов; A.A. Димитриев; В.В. Коробцов
• Keywords: Surface Photovoltage; Photoconductivity

AbstractThe results of a comparative study the lateral photovoltaic effect in Fe_3O_4/SiO_2/ n -Si and p structures are presented. The photovoltage reaches its maximum near measurement contacts both structures, but signs this voltage differ. As light spot moves away from contacts, varies linearly decreases exponentially -Si. It is found that interface states at SiO_2/Si induce polarity inversion associated with change conductivity type silicon. An extreme thickness dependence an optimum Fe_3O_4 film ~50 nm observed structures.