Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature

• DOI: 10.23919/vlsitechnologyandcir57934.2023.10185320
• Publication Date: 2023-07-24T17:36:33Z
• Authors: Gerui Zheng; Yuxuan Wang; Haiwen Xu; Rami Khazaka; Lutz Muehlenbein; Sheng Luo; Xuanqi Chen; Rui Shao; Zijie Zheng; Gengchiau Liang; Xiao Gong

We report the first demonstration of active boron (B) doping concentration $\left(N_{A}\right)$ higher than $2.50 \times 10^{21} \mathrm{~cm}^{-3}$ in high Ge content (> 65%) Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> using In-situ growth technique with a low temperature below 500 °C. achieve excellent uniformities thickness and resistivity across entire 300 mm wafer obtain an ultra-low as-deposited specific contact $\left(\rho_{c}\right)$ down to $2.9 \pm 2.8 10^{-10} \Omega-\mathrm{cm}^{2}$ on sample average $2.80 composition 65%. further detail progression selective such $\mathrm{Si}_{1 \cdot x} \mathrm{Ge}_{x}$ film advanced 3D structures. Using metal $/ \mathrm{Si}_{1-x} ladder TLM (LTLM) structures, we investigate properties from room cryogenic temperatures as $5 \mathrm{~K}$, disclosing for time insignificant change $\rho_{c}$ at regimes.