Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence

• DOI: 10.23919/vlsitechnologyandcir57934.2023.10185380
• Publication Date: 2023-07-24T13:36:33Z
• Authors: Zuoyuan Dong; Zixuan Sun; Xin Yang; Xiaomei Li; Yongkang Xue; Chen Luo; Puyang Cai; Zirui Wang; Shuying Wang; Yewei Zhang; Chaolun Wang; Pengpeng Ren; Zhigang Ji; Xing Wu; Runsheng Wang; Ru Huang
• Keywords: Dielectric strength; Electric breakdown

For the first time, on-state (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> >0, V xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> > 0) time-dependent dielectric breakdown (TDDB) in FinFET technology is systematically studied. The assumption that kinetics of soft (SBD) would remain same and have no effect on electromigration (EM) not true using advanced physical characterization techniques (TEM/EDX/EELS), as well electrical-statistical tests multiphysics simulations. By catching missing EM consequence SBD, impacts self-heating an EM-aware layout topology Our study provide solid evidence SBD-induced EM, which vital for accurate prediction boosting circuit reliability FinFETs other multiple-gate device technology.