Improvement performance CIGS thin film solar cells by changing the thickness Cd_S layer

Open-circuit voltage
DOI: 10.24200/jrset.vol6iss03pp11-14 Publication Date: 2018-01-01
ABSTRACT
In this study the function of solar cells with structure CuIn1-xGaxSe2 is examined. CIGS cell consists layers ZnO (Layer TCO), Cd_S (buffer layer), (absorbent and Layer MO (substrate), which form a PN Junction. Later using SILVACO software simulated. Then, simulated software, thickness layer changed. Important parameters that will be discussed here, include open circuit voltage (VOC), short current (ISC), maximum power (Pmax), filling factor (FF) efficiency (η). After conducted simulations, it was changing has impact on function.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES ()
CITATIONS ()
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....