Determination of the basic optical parameters of CdX (X=Se, S) thin films prepared with low concentration precursor solutions

• DOI: 10.29228/jchar.68499
• Publication Date: 2023-03-19T17:11:07Z
• Authors: Fatih ÜNAL

CdSe and CdS thin films, one of the II-VI group semiconductor compounds, were successfully grown by electrochemical deposition method using low concentrations precursor solutions.Optical properties fabricated films investigated in 300 -850 nm wavelength range.The absorption coefficients found to be as 5.8 x 10 5 m -1 8.9 6 , respectively, direct energy band gaps these determined 2.72 eV 2.75 eV.While average transmission value was 85%, that 8%.Additionally, extinction coefficient values defined 0.033 0.51, respectively refractive index 1.14 1.35.Besides, optical dielectric constants examined.While real constant, imaginary loss conductivity 1.24, 0.05, 0.004 1.38x10 14 those film 1.51, 0.94, 0.64 2.49x10 15 .