Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

• DOI: 10.3103/s106287381602012x
• Publication Date: 2016-03-30T04:50:29Z
• Authors: F. F. Komarov; O. V. Milchanin; V. A. Skuratov; M. A. Makhavikou; A. Janse van Vuuren; J. N. Neethling; E. Wendler; L. A. Vlasukova; I. N. Parkhomenko; V. N. Yuvchenko
• Keywords: Nanoclusters; Ion track

The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO2 matrix is observed.