Electron and Hole Mobility of SnO2 from Full-Band Electron–Phonon and Ionized Impurity Scattering Computations

• DOI: 10.3390/cryst12111591
• Publication Date: 2022-11-09T07:34:52Z
• Authors: Zhen Li; Patrizio Graziosi; Neophytos Neophytou
• Keywords: Electron Mobility; Ionized impurity scattering; Phonon scattering

Mobility is a key parameter for SnO2, which extensively studied as practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V−1s−1 at room temperature. Here, we calculate limited by electron–phonon and ionized impurity scattering coupling Boltzmann transport equation with density functional theory electronic structures. The linearized solved numerically beyond commonly employed constant relaxation-time approximation taking into account all energy momentum dependencies rates. Acoustic deformation potential polar optical phonons are considered scattering, where phonon found be main factor determines both holes calculated phonon-limited electron 265 cm2V−1s−1, whereas that 7.6 cm2V−1s−1. We present function carrier concentration, shows upper limit. large difference between mobilities p-type result different effective masses holes.