Mechanism of Grain Densification in Nano- and Poly-Crystalline Cu Films and Its Impact in Advanced Metallization Processes

• DOI: 10.3390/cryst14020125
• Publication Date: 2024-01-26T13:56:01Z
• Authors: Brunella Cafra; Alessandra Alberti; Gaetano Calogero; Ioannis Deretzis; Antonio Landi; Daniele Pagano; Salvatore Sanzaro; Antonino La Magna
• Keywords: Crystallography; QD901-999; copper; warpage; annealing; grain boundaries; 02 engineering and technology; polycrystalline; 0210 nano-technology; metallization

We investigate the microstructural evolution of electrochemically deposited poly-crystalline Cu films during subsequent thermal process cycles at mild maximum temperatures, compatible with integration in advanced metallization schemes for electronic device manufacturing. The modifications induced by budget have been characterized different scales (from film-substrate interface to wafer scale) complementary techniques: X-ray Diffraction (XRD), scanning electron microscopy (SEM), atomic force (AFM), and dynamical warpage measurements. Moreover, film internal grains’ has modelled a tri-dimensional on-cell model, derived Pott-like multi-states configurational energy dependence, able consider multiple orientation grains densification kinetics canonical ensemble. Finally, macroscopic model dependence on conditions is discussed. presented joint theoretical experimental analysis provides complete consistent scenario grain phenomenon its impact microstructure composite system morphology, indicating several strategies real structures.