ZnO Nanorods as Antireflection Layers in Metal-Insulator-Semiconductor Solar Cells

• DOI: 10.3390/electronics11132068
• Publication Date: 2022-07-01T04:21:50Z
• Authors: Chung-Cheng Chang; Chia-Hong Huang
• Keywords: Nanorod; Passivation; Open-circuit voltage

One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) with sol-gel SiO2. Except Al electrodes prepared by thermal evaporation, no other vacuum process was utilized during fabrication. The NRs were produced hydrothermal method and suppressed Fresnel reflection. With NRs, observed average reflectance MIS cell decreased from 38.7% to 15.8%, short circuit density (JSC) increased 5.22 mA/cm2 6.71 (28.4% enhancement). Meanwhile, open voltage (VOC) improved 0.39 V 0.47 owing passivation effect. exhibited 35.5% efficiency enhancement compared without NRs. performance improvement in could be due multiple reflections an incident light between vertically arranged then coupling into cell. results show potential application cells.