A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements

• DOI: 10.3390/electronics12081771
• Publication Date: 2023-04-10T07:19:54Z
• Authors: Giovanni Crupi; Mariangela Latino; Giovanni Gugliandolo; Zlatica Marinković; Jialin Cai; Gianni Bosi; Antonio Raffo; Enza Fazio; Nicola Donato
• Keywords: Extremely high frequency; Transistor model

The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of GaN material. Over years, much effort been spent on measurement-based modeling since accurate models are essential allowing use this advanced at its best. present analysis is focused scattering (S-) parameter measurements a 0.25 μm HEMT silicon carbide (SiC) substrate extreme operating conditions: large gate width (i.e., based interdigitated layout consisting ten fingers, each with length 150 μm, resulting in total periphery 1.5 mm), ambient temperature from 35 °C up 200 step 55 °C), dissipated power 5.1 W frequency millimeter-wave range MHz 65 GHz MHz). Three different approaches investigated: equivalent-circuit model, artificial neural networks (ANNs), gated recurrent units (GRUs). As shown, approach pros cons that need be considered, depending target performance their specifications. This implies appropriate selection should discerning prioritizing key features indeed most important given application.