Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

0103 physical sciences 01 natural sciences
DOI: 10.3390/electronics8050575 Publication Date: 2019-05-24T15:20:46Z
ABSTRACT
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
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