A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio
Cascode
DOI:
10.3390/electronics9050785
Publication Date:
2020-05-11T14:01:18Z
AUTHORS (4)
ABSTRACT
This work presents a new design methodology for radio frequency (RF) integrated circuits based on unified analysis of the scattering parameters circuit and gm/ID ratio involved transistors. Since are parameterized by means physical characteristics transistors, designers can optimize transistor size biasing to comply with specifications given in terms S-parameters. A complete cascode low noise amplifier (LNA) MOS 65 nm technology is taken as case study order validate approach. In addition, this permits identification best trade-off between minimum figure maximum gain LNA very simple way.
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