A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

Cascode
DOI: 10.3390/electronics9050785 Publication Date: 2020-05-11T14:01:18Z
ABSTRACT
This work presents a new design methodology for radio frequency (RF) integrated circuits based on unified analysis of the scattering parameters circuit and gm/ID ratio involved transistors. Since are parameterized by means physical characteristics transistors, designers can optimize transistor size biasing to comply with specifications given in terms S-parameters. A complete cascode low noise amplifier (LNA) MOS 65 nm technology is taken as case study order validate approach. In addition, this permits identification best trade-off between minimum figure maximum gain LNA very simple way.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (32)
CITATIONS (5)