Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

• DOI: 10.3390/en10040414
• Publication Date: 2017-03-23T15:47:59Z
• Authors: Sindy Würzner; Martin Herms; Thomas Kaden; Hans Möller; Matthias Wagner
• Keywords: diamond wire; silicon; wire velocity; wire cutting ability; stress imaging; stress-induced birefringence; amorphous phase; microcrack depth; Raman; SIREX; 0103 physical sciences; 01 natural sciences

A detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating sawing process is presented. Residual stresses, presence amorphous and microcracks are considered related wire velocity cutting ability. In particular, degree amorphization wafer surface analyzed, as it may affect etching performance (texturing) during solar cell manufacture. Raman spectroscopy Scanning Infrared Stress Explorer (SIREX) measurements used independently non-destructive, contactless optical characterization methods provide stress imaging with high spatial resolution. mappings show that layers can occur inhomogeneously across wafers. The SIREX results reveal a connection between higher fraction phase, more inhomogeneous distribution lower peak maximum difference on wafers, depending both wear velocity. line scans in-plane principal components ∆σ taken grooves significant differences in magnitude periodicity. Furthermore, compared microcrack depth from same investigation areas. possibility optimize processes by analyzing offered complementary use measurements.