Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

• DOI: 10.3390/ma10010024
• Publication Date: 2017-01-02T14:54:18Z
• Authors: Honglong Ning; Xianzhe Liu; Hongke Zhang; Zhiqiang Fang; Wei Cai; Jianqiu Chen; Rihui Yao; Miao Xu; Lei Wang; Linfeng Lan; Junbiao Peng; Xiaofeng Wang; Zichen Zhang
• Keywords: 0103 physical sciences; intrinsic stress; Si-doped SnO₂; amorphous oxide semiconductors; 01 natural sciences; Article

The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm2/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV−1·cm−2, respectively.