Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

• DOI: 10.3390/photonics5020013
• Publication Date: 2018-05-29T06:58:18Z
• Authors: Xiangying Deng; Marolop Simanullang; Yukio Kawano
• Keywords: terahertz; nanowire; 0103 physical sciences; field-effect transistor; Applied optics. Photonics; planar antenna; photodetector; 01 natural sciences; TA1501-1820

Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one of the most promising candidates. In this study, we use a Ge-core/a-Si-shell nanowire coupled to a bow-tie antenna to fabricate a FET structure for terahertz detection. We achieved high responsivity and low noise equivalent power (NEP) upon irradiation at 1.63 THz. The proposed sensitive terahertz detector will further promote the development of terahertz technology in fields such as spectroscopic analysis and imaging.