Molecular direct bonding and transfer of 2D MoS2 layer over a full 200 mm silicon wafer

• DOI: 10.35848/1347-4065/adc81c
• Publication Date: 2025-04-02T22:48:21Z
• Authors: F. Fournel; S. Cadot; E. Rolland; P. Brunet; T. Meyer; C. Pinchart; L. Le Van-Jodin
• Keywords: Wafer Bonding; Direct bonding

Abstract Two-dimensional (2D) materials offer exceptional properties for microelectronics, yet scaling these technologies from laboratory research to industrial applications remains challenging. Processes growth, transfer, and fabrication require significant adaptation. Direct bonding transfer without polymer intermediaries are particularly attractive avoiding organic residues potential defects. This study demonstrates the of 2D MoS2 layers onto full 200 mm silicon wafers using direct molecular bonding. Additionally, a water-mediated process growth substrate target wafer is described. Utilizing hydrophobic wafer, over 95 % material surface successfully transferred while preserving quality, as verified through photoluminescence characterization.