Low-voltage carbon nanotube complementary electronics using chemical doping to tune the threshold voltage

• DOI: 10.35848/1882-0786/abe8aa
• Publication Date: 2021-02-22T22:31:35Z
• Authors: Fu Wen Tan; Jun Hirotani; Yoshiyuki Nonoguchi; Shigeru Kishimoto; Hiromichi Kataura; Yutaka Ohno
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract Simultaneous controlling of the threshold voltage of both p- and n-type transistors, comprising complementary integrated circuits, is required to develop low-voltage and low-power flexible electronics. In this study, we report tuning the threshold voltage of carbon nanotube thin-film transistors with organic and metal-ion complex salts as dopants, and using device passivation to secure air-stability. Chemical doping affords simple yet precise control of the dopant level and enables the threshold voltages to be finely tuned. Complementary inverters were fabricated on a plastic substrate. Operation at a low supply voltage of 0.5 V was achieved with fairly high gain and noise margins.