230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs

• DOI: 10.35848/1882-0786/ad3e48
• Publication Date: 2024-04-12T22:40:36Z
• Authors: Kenjiro Uesugi; Ryota Akaike; Shuhei Ichikawa; Takao Nakamura; Kazunobu Kojima; Masahiko Tsuchiya; Hideto Miyake
• Keywords: Quantum Efficiency

Abstract Reducing the average Al composition of x Ga 1− N/Al y N multiple quantum wells (MQWs) is an effective approach to increase current injection efficiencies far-UV-C LEDs (far-UVC LEDs). A reduction can be realized by decreasing Al-composition differentiation between well and barrier layers. Compared conventional MQWs, a 230 nm wavelength far-UVC LED equipped with single-Al-composition 39 thick light-emitting layer exhibits higher external efficiency (EQE). The EQE low (∼1%) enhanced approximately 0.6% 1.4% under continuous wave operations at 236 wavelengths, respectively.