High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

• DOI: 10.35848/1882-0786/ad68c2
• Publication Date: 2024-07-29T22:58:00Z
• Authors: Yusuke Kumazaki; Shiro Ozaki; Yasuhiro Nakasha; Naoya Okamoto; Atsushi Yamada; Toshihiro Ohki
• Keywords: Physics; QC1-999; 02 engineering and technology; sub-terahertz; 0210 nano-technology; HEMT; GaN; 6G

Abstract This study describes high-power and high-efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) for future sub-terahertz wireless communications. A low-thermal-budget selective-area growth (SAG) process was developed to obtain low contact resistance with trap states. Transmission lines substrate structures were optimized high-thermal conductivity resonance. Consequently, a high output power of 28.7 dBm (742 mW), density 4.6 W mm −1 , power-added efficiency (PAE) 28.0% achieved pre-matched HEMTs at 90 GHz, which superior combination PAE compared the conventional high-temperature SAG process.