ScAlN/GaN-on-Si (111) HEMTs for RF applications

• DOI: 10.35848/1882-0786/adc5db
• Publication Date: 2025-03-26T23:15:20Z
• Authors: Seif El Whibi; Nagesh Bhat; Yassine Fouzi; Nicolas De France; Jean-Claude De Ja...; Zahia Bougrioua; Florian Bartoli; Maxime Hugues; Yvon Cordier; Marie Lesecq

Abstract ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks higher 2-dimensional gas (2DEG) density and thinner with lower lattice mismatch GaN. A sub-10 nm ScAlN/GaN heterostructure, grown by ammonia-source molecular beam epitaxy on Si(111), processed into transistors. The 2DEG 1.6x10 13 cm -2 μ ∼ 621 2 /V.s. 75-nm gate length transistor exhibits drain current of 1.35 A/mm, transconductance ~284 mS/mm, gain cutoff frequency 82 GHz maximum oscillation 112 GHz.